Difference between revisions of "Piranha Etch"
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| Line 19: | Line 19: | ||
==Chemicals== | ==Chemicals== | ||
| − | *[ | + | *[[Sulfuric Acid]] |
| − | *[ | + | *[[ Hydrogen Peroxide]] |
==Locations== | ==Locations== | ||
Revision as of 08:48, 28 July 2015
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Piranha Etch |
| Technology | [[]] |
| Chemicals Used | Sulfuric Acid, Hydrogen Peroxide |
| Date Created | 5/12/15 |
| Date Modified | 5/12/15 |
| Authored By | Rob Hower |
Contents
Chemicals
Locations
- Acid Bench 02 CMOS Clean 4" and 6" Silicon
- Acid Bench 12 Metals allowed 4" and 6" Silicon and Glass
- Acid Bench 72 Pieces to 6" wafers any material
- Acid Bench 73 Pieces to 6" wafers any material
Characterization
Etch Rate
Will clean organic residue off of wafer in approximately 10-20 min
Mask Selectivity
Limitations
Will attack any polymers on the surface
