Difference between revisions of "Piranha Etch"

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*[[Acid Bench 72|Acid Bench 72]] Pieces to 6" wafers any material
 
*[[Acid Bench 72|Acid Bench 72]] Pieces to 6" wafers any material
 
*[[Acid Bench 73|Acid Bench 73]] Pieces to 6" wafers any material
 
*[[Acid Bench 73|Acid Bench 73]] Pieces to 6" wafers any material
 +
*[[Acid Bench 93|Acid Bench 93]] Pieces to 4" wafers any material
  
 
==Characterization==
 
==Characterization==

Revision as of 12:36, 28 July 2015


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About this Process
Process Details
Equipment Piranha Etch
Technology [[]]
Chemicals Used Sulfuric Acid, Hydrogen Peroxide
Date Created 5/12/15
Date Modified 5/12/15
Authored By Rob Hower



Chemicals

Locations

Characterization

Etch Rate

Will clean organic residue off of wafer in approximately 10-20 min

Mask Selectivity

Limitations

Will attack any polymers on the surface