Piranha Etch
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| About this Process | |
|---|---|
| Process Details | |
| Equipment | Piranha Etch |
| Technology | [[]] |
| Chemicals Used | Sulfuric Acid, Hydrogen Peroxide |
| Date Created | 5/12/15 |
| Date Modified | 5/12/15 |
| Authored By | Rob Hower |
Piranha is a heated strongly oxidizing mixture of sulfuric acid and hydrogen peroxide used to remove organic material from the surface of samples.
Contents
Chemicals
Locations
- Acid Bench 02 CMOS Clean 4" and 6" Silicon
- Acid Bench 12 Metals allowed 4" and 6" Silicon and Glass
- Acid Bench 72 Pieces to 6" wafers any material
- Acid Bench 73 Pieces to 6" wafers any material
- Acid Bench 92 Pieces to 4" wafers any material
Characterization
When the two chemicals are mixed a very exothermic reaction will occur. It will heat to 120-150C almost instantly. This is hot enough to soften many plastics, including the deck of the benches.
Etch Rate
Will clean organic residue off of wafer in approximately 10-20 min
Standard Operating Procedure
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Limitations
Will attack any polymers on the surface
