Difference between revisions of "Plasma etching"

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|technology = Etching
|technology = Etching
|names = Dry etching
|names = Dry etching
|equipment = [[:Category:RIE equipment|List of RIE equipment]]
|equipment = [[:Category:Plasma etching equipment|List of plasma etching equipment]]

Revision as of 10:51, 10 August 2015

Plasma etching
Technology Details
Other Names Dry etching
Technology Etching
Equipment List of plasma etching equipment

Plasma etching is a form of plasma processing designed to remove material from a sample using plasma discharges. It is highly controllable and can be used to etch a wide variety of materials. The most commonly used form of plasma etching is referred to in the microfabrication world as reactive ion etching (RIE). However, there are other types of plasma etching, including plasma ashing and ion milling. For a detailed overview of plasma etching in the LNF, please review the technology workshop

Method of operation

Coming back to this...


<excerpted from RIE so I can reference it while writing the page> Many of the same parameters used in plasma etching apply to RIE, including pressure, gas composition, and generator power. Of particular importance is the plasma generation method (commonly a parallel plate or ICP configuration), as they have different advantages depending on the material being etched.

Gas composition

Main article: Plasma etching/Gases

The type and ratio of gases used in a plasma etch is chosen depending on the material being etched, the masking material, and the etch stop material in order to achieve high selectivity.


Chamber pressure varies depending on the system and material being etched but typically ranges from 5 mTorr to 300 mTorr. Typically, more physical etches and etches designed to be very vertical or to have high aspect ratios run at lower pressures, while more reactive etches will use a higher pressure to increase the density of the reactive gases. Most plasma etching systems control the pressure in the chamber using a throttle valve on the exhaust port, allowing it to be accurately set regardless of the gases chosen.

Plasma source and power

The plasma generation source is critical to the function of the etch. Capacitively and inductively coupled RF plasmas are very common, particularly in RIE, but certain applications may use microwave sources, ECR sources, etc. Additionally, while in RIE the sample is typically placed directly under the source, sometimes the sample may be placed more indirectly from the source, such as in plasma ashing.

Source power stuff

Bias power stuff

Sample temperature

Reactive ion etching

Main article: Reactive ion etching

Reactive ion etching (RIE) is one of the most common forms of plasma etching. It typically uses a combination of chemically reactive elements and energetic ions to etch the desired material. One major advantage to RIE over other forms of etching is that the process can be designed to be highly anisotropic, allowing for much finer resolution and higher aspect ratios.

Plasma ashing

Main article: Plasma ashing

Plasma ashing typically refers to the removal of organics, particularly photoresist from a sample using a plasma discharge. These processes typically use oxygen as the main etch gas and sometimes require a high temperature to enhance the reactivity.

Ion milling

Main article: Ion milling

<stuff about ion milling> The LNF currently does not have any ion milling capabilities


For a complete list of plasma etching equipment available at the LNF, please see list of plasma etching equipment or the specific plasma etching category, above.

See also





Further reading