|Other Names||Dry etching|
|Equipment||List of RIE equipment|
Plasma etching is a form of plasma processing designed to remove material from a sample using plasma discharges. It is highly controllable and can be used to etch a wide variety of materials. The most commonly used form of plasma etching is referred to in the microfabrication world as reactive ion etching (RIE). However, there are other types of plasma etching, including plasma ashing and ion milling. For a detailed overview of plasma etching in the LNF, please review the technology workshop
Method of operation
Coming back to this...
<excerpted from RIE so I can reference it while writing the page> Many of the same parameters used in plasma etching apply to RIE, including pressure, gas composition, and generator power. Of particular importance is the plasma generation method (commonly a parallel plate or ICP configuration), as they have different advantages depending on the material being etched.
Plasma source and power
The plasma generation source is critical to the function of the etch. Capacitively and inductively coupled RF plasmas are very common, particularly in RIE, but certain applications may use microwave sources, ECR sources, etc. Additionally, while in RIE the sample is typically placed directly under the source, sometimes the sample may be placed more indirectly from the source, such as in plasma ashing.
Source power stuff
Bias power stuff
Reactive ion etching
<stole from the RIE page, need to simplify/not be redundant> Reactive ion etching (RIE) is a high resolution mechanism for etching materials using reactive gas discharges. It is a highly controllable process that can process a wide variety of materials, including semiconductors, [dielectrics][semiconductors]] and some metals. One major advantage to RIE over other forms of etching is that the process can be designed to be highly anisotropic, allowing for much finer resolution and higher aspect ratios.
Plasma ashing typically refers to the removal of organics, particularly photoresist from a sample using a plasma discharge. These processes typically use oxygen as the main etch gas and sometimes require a high temperature to enhance the reactivity.
<stuff about ion milling> The LNF currently does not have any ion milling capabilities
For a complete list of plasma etching equipment available at the LNF, please see list of plasma etching equipment or the specific plasma etching category, above.