Difference between revisions of "Plasma processing"
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| − | + | Plasma processing refers to any microfabrication process that uses a plasma discharge to achieve the process results. There are [[Plasma deposition|deposition]] processes like [[PECVD]] and [[sputter deposition|sputtering]], [[Plasma etching|etching]] processes (RIE), [[Plasma cleaning|cleaning]], and [[surface activation]] to name a few. | |
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| − | + | ==Plasma deposition== | |
| + | {{main|Plasma deposition}} | ||
| − | + | [[Plasma deposition]] processes... | |
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| − | ===Plasma deposition=== | + | ===Plasma enhanced chemical vapor deposition=== |
| − | {{main|Plasma deposition}} | + | {{main|PECVD}} |
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| + | [[Plasma enhanced chemical vapor deposition]] (PECVD) is a form of [[chemical vapor deposition]] that uses a plasma to dissociate reactant gases that then recombine on the sample surface into the desired material. This allows for deposition at lower temperatures (typically 200-400°C) than other forms of CVD. | ||
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| + | ===Sputter deposition=== | ||
| + | {{main|Sputter deposition}} | ||
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| + | [[Sputter deposition]] is a form of [[physical vapor deposition]] that uses a plasma to physically vaporize atoms from the source target which then condense on the surface of the sample. The sample can be held at room temperature or heated. Reactive sputtering can also be performed, where the vaporized material reacts with a gas such as [[nitrogen]] or [[oxygen]] when it condenses on the sample. | ||
| − | + | ==Plasma etching== | |
{{main|Plasma etching}} | {{main|Plasma etching}} | ||
[[Plasma etching]] uses chemical and physical reactions between the plasma and the surface of the sample to remove a desired material from the sample. It is a highly controllable process compared to other forms of etching. | [[Plasma etching]] uses chemical and physical reactions between the plasma and the surface of the sample to remove a desired material from the sample. It is a highly controllable process compared to other forms of etching. | ||
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| + | ===Reactive ion etching=== | ||
| + | {{main|RIE}} | ||
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| + | [[Reactive ion etching]] (RIE) is the most common type of plasma etching. It uses a combination of chemical reactions and physical sputtering of the sample to remove the desired material. There are a wide range of materials that can be etched in this manner using a variety of etch chemistries. | ||
===Plasma cleaning=== | ===Plasma cleaning=== | ||
{{main|Plasma cleaning}} | {{main|Plasma cleaning}} | ||
| − | + | [[Plasma cleaning]] typically uses [[oxygen]] or [[argon]] plasmas to remove undesired residues from a sample. It is often used to prepare a sample for a [[deposition]] or [[lithography]] process. | |
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| + | ==Surface activation== | ||
{{main|Surface activation}} | {{main|Surface activation}} | ||
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| + | [[Surface activation]] uses a plasma to modify the surface of a material. It can be used to change surface tension (e.g. make a surface hydrophilic or hydrophobic) or to prepare a surface for [[wafer bonding|bonding]]. | ||
==Equipment== | ==Equipment== | ||
For a complete list of plasma processing equipment available at the LNF, please see [[:Category:Plasma processing equipment]] or the appropriate technology listed above. | For a complete list of plasma processing equipment available at the LNF, please see [[:Category:Plasma processing equipment]] or the appropriate technology listed above. | ||
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| + | [[Category:Plasma processing]] | ||
| + | [[Category:Technology]] | ||
Latest revision as of 16:31, 19 January 2016
Plasma processing refers to any microfabrication process that uses a plasma discharge to achieve the process results. There are deposition processes like PECVD and sputtering, etching processes (RIE), cleaning, and surface activation to name a few.
Contents
Plasma deposition
Plasma deposition processes...
Plasma enhanced chemical vapor deposition
Plasma enhanced chemical vapor deposition (PECVD) is a form of chemical vapor deposition that uses a plasma to dissociate reactant gases that then recombine on the sample surface into the desired material. This allows for deposition at lower temperatures (typically 200-400°C) than other forms of CVD.
Sputter deposition
Sputter deposition is a form of physical vapor deposition that uses a plasma to physically vaporize atoms from the source target which then condense on the surface of the sample. The sample can be held at room temperature or heated. Reactive sputtering can also be performed, where the vaporized material reacts with a gas such as nitrogen or oxygen when it condenses on the sample.
Plasma etching
Plasma etching uses chemical and physical reactions between the plasma and the surface of the sample to remove a desired material from the sample. It is a highly controllable process compared to other forms of etching.
Reactive ion etching
Reactive ion etching (RIE) is the most common type of plasma etching. It uses a combination of chemical reactions and physical sputtering of the sample to remove the desired material. There are a wide range of materials that can be etched in this manner using a variety of etch chemistries.
Plasma cleaning
Plasma cleaning typically uses oxygen or argon plasmas to remove undesired residues from a sample. It is often used to prepare a sample for a deposition or lithography process.
Surface activation
Surface activation uses a plasma to modify the surface of a material. It can be used to change surface tension (e.g. make a surface hydrophilic or hydrophobic) or to prepare a surface for bonding.
Equipment
For a complete list of plasma processing equipment available at the LNF, please see Category:Plasma processing equipment or the appropriate technology listed above.
