Difference between revisions of "Plasmatherm 790"
| Line 3: | Line 3: | ||
|materials = [[Si]], [[SiO2|SiO<sub>2</sub>]] | |materials = [[Si]], [[SiO2|SiO<sub>2</sub>]] | ||
|mask = [[Photoresist|PR]], [[SiO2|SiO<sub>2</sub>]] | |mask = [[Photoresist|PR]], [[SiO2|SiO<sub>2</sub>]] | ||
| − | |gases = [[Ar]], [[ | + | |gases = [[Argon|Ar]], [[Methane|CH<sub>4</sub>]], [[Fluoroform|CHF<sub>3</sub>]], [[Tetrafluoromethane|CF<sub>4</sub>]], |
| − | [[ | + | [[Hydrogen|H<sub>2</sub>]], [[Oxygen|O<sub>2</sub>]], [[Sulfur Hexafluoride|SF<sub>6</sub>]] |
|overview = [[{{PAGENAME}}#System_Overview | System Overview]] | |overview = [[{{PAGENAME}}#System_Overview | System Overview]] | ||
|sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1iRHIBHG0BvqpsX1quhb8YszCImOkyvzJx_SxqluPOt8/preview SOP] | |sop = [https://docs.google.com/a/lnf.umich.edu/document/d/1iRHIBHG0BvqpsX1quhb8YszCImOkyvzJx_SxqluPOt8/preview SOP] | ||
Revision as of 13:57, 24 February 2015
| Plasmatherm 790 | |
|---|---|
 | |
| Equipment Details | |
| Technology | RIE |
| Materials Restriction | Undefined |
| Material Processed | Si, SiO2 |
| Mask Materials | PR, SiO2 |
| Gases Used | H2, O2, SF6 |
| Equipment Manual | |
| Overview | System Overview |
| Operating Procedure | SOP |
| Supported Processes | Supported Processes |
| User Processes | User Processes |
 Warning: | This page has not been released yet. |
The Plasmatherm 790 is a dual chamber parallel plate tool. The left chamber is configured for reactive ion etching (RIE) while the right chamber is configured for plasma enhanced chemical vapor deposition (PECVD).
Contents
Announcements
- [2014-09-25] - Added 500 sccm Helium MFC to PECVD chamber.
Capabilities
- Wide variety of materials processed
- Wide variety of gases available
- Generally slower etch rates <1000 Å/min
System Overview
Hardware Details
- RIE Gases
- PECVD Gases
- Pressure
- RIE: 5 - 300 mTorr
- PECVD: 50 - 2000 mTorr
- Chuck
- PECVD: Heated Platen: 200°C - 350°C
- RF
- 400 W 13.56 MHz RF Source
Substrate Requirements
- RIE
- Up to 3 100 mm (4") wafers
- Pieces don't require mounting
- PECVD
- 1 150 mm (6") wafer
- 2 100 mm (4") wafers
- Several pieces
Material Restrictions
Below is a list of approved and restricted materials for the tool. "Approved" means the material is allowed in the tool under normal circumstances. "Not Allowed" means the material may never be used in the tool. If a material is not listed, it may be possible to use the material under certain conditions. Please contact a tool engineer via the helpdesk ticket system for any material requests or questions.
Supported Processes
There are several processes for this tool supported by the LNF, which are described in more detail on the Processes page.
In addition to these, this tool has a number of user-created recipes for etching a wide variety of materials. Some of these recipes are documented on LNF User:Plasmatherm 790 User Processes. If you are curious if your material can be processed in this tool, please contact the tool engineers via the helpdesk ticket system.
Standard Operating Procedure
Widget text will go here.
Checkout Procedure
- Read through the Standard Operating Procedure above.
- Complete the training request form [<link> here].
- Create a helpdesk ticket requesting training.
- A tool engineer will schedule a time for initial training.
- Practice with your mentor or another authorized user until you are comfortable with tool operation.
- Complete the SOP quiz here.
- Schedule a checkout session with a tool engineer via the helpdesk ticket system. If this checkout is successful, the engineer will authorize you on the tool.
Tool Qualification
Every other week a light cleaning is performed on the tool. A 5 min etch with m_si_o_1 is performed on a 4" oxide wafer. The results can be seen below.
