Difference between revisions of "Plasmatherm 790/Processes"

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* [[Plasmatherm 790/Processes/L_ox350]]
 
* [[Plasmatherm 790/Processes/L_ox350]]
 
* [[Plasmatherm 790/Processes/L_ox350R]]
 
* [[Plasmatherm 790/Processes/L_ox350R]]
*: This is etch is modified to reduce the film roughness.
+
*: This is deposition recipe is modified to reduce the film roughness.
  
 
There are also 2 nitride recipes available, at 200°C, and 350°C.  These have the index and stress optimized.
 
There are also 2 nitride recipes available, at 200°C, and 350°C.  These have the index and stress optimized.

Revision as of 08:40, 19 July 2016

This page lists the processes supported by the LNF for the Plasmatherm 790.

Process List

RIE

PECVD

The Plasmatherm has 3 oxide recipes available, at 200°C, and 350°C.

There are also 2 nitride recipes available, at 200°C, and 350°C. These have the index and stress optimized.

Then there is also 1 oxynitride recipe at 350°C. It is designed to have minimal stress.