Plasmatherm 790/Processes/L O2 DSM

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L_O2_DSM is an O2 etch designed for photoresist descumming.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material SPR 220
Gases Used O2



Parameters

Parameter Etch
RF Power 50 W
Pressure 200 mTorr
O2 Flow 75 sccm

Capabilities

Etch Rate

Mask Selectivity

  • Si Etch Rate: <5 Å/min
  • SiO2 Etch Rate: <5 Å/min