Plasmatherm 790/Processes/L O2 DSM

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L_O2_DSM is an O₂ etch designed for photoresist descumming.

About this Process
Process Details
Equipment	Plasmatherm 790
Technology	RIE
Material	SPR 220
Gases Used	O₂

Contents

1 Parameters
2 Capabilities
- 2.1 Etch Rate
- 2.2 Mask Selectivity

Parameters

Parameter	Etch
RF Power	50 W
Pressure	200 mTorr
O₂ Flow	75 sccm

Capabilities

Etch Rate

SPR 220: 500 Å/min

Mask Selectivity

Si Etch Rate: <5 Å/min
SiO2 Etch Rate: <5 Å/min

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