Difference between revisions of "Plasmatherm 790/Processes/L nit200"
< Plasmatherm 790 | Processes
Jump to navigation
Jump to search
| Line 60: | Line 60: | ||
|} | |} | ||
| + | Qualification is done with a 5 minute run, max allowed thickness of 2µm. | ||
==Qualification== | ==Qualification== | ||
Revision as of 16:39, 26 March 2018
l_nit200 is a lower temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2, He |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.2 sccm |
| N2 Flow | 200 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 5.6 Å/sec |
| Index of Refraction | 2.00 ± 0.02 |
| Stress | 50 ± 50 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
Qualification
Occasionally L_nit200 is tested on a 100 mm Si wafer. The results can be seen below.
![[icon]](/wiki/File:Wiki_letter_w.svg){kind=small} | This section requires expansion with: need the chart. |
