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l_nit200 is a lower temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2, He


Deposition Rate 5.6 Å/sec
Index of Refraction 2.00 ± 0.02
Stress 50 ± 50 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.


Parameter Dep
RF Power 150 W
Pressure 1500 mTorr
NH3 Flow 1.2 sccm
N2 Flow 200 sccm
He Flow 490 sccm
SiH4 Flow 5 sccm
Temperature 200°C