Plasmatherm 790/Processes/L nit200
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Revision as of 10:37, 28 October 2021 by Wrightsh (talk | contribs) (→Capabilities)
l_nit200 is a lower temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
|About this Process|
|Gases Used||SiH4, NH3, N2, He|
|Deposition Rate||34.1 nm/min|
|Index of Refraction||1.998|
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
|RF Power||150 W|
|NH3 Flow||1.2 sccm|
|N2 Flow||200 sccm|
|He Flow||490 sccm|
|SiH4 Flow||5 sccm|