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Plasmatherm 790/Processes/L nit200

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Revision as of 09:37, 28 October 2021 by Wrightsh (talk | contribs) (→‎Capabilities)
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l_nit200 is a lower temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2, He



Capabilities

Parameter
Deposition Rate 34.1 nm/min
Index of Refraction 1.998
Stress 25 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.

Parameters

Parameter Dep
RF Power 150 W
Pressure 1500 mTorr
NH3 Flow 1.2 sccm
N2 Flow 200 sccm
He Flow 490 sccm
SiH4 Flow 5 sccm
Temperature 200°C