Plasmatherm 790/Processes/L nit200

From LNF Wiki
< Plasmatherm 790‎ | Processes
Revision as of 14:33, 3 August 2015 by Wrightsh (talk | contribs) (Created page with "l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790. Category:Processes {{Infobox process |image = |caption = |technology = PECVD |materi...")
(diff) ← Older revision | Latest revision (diff) | Newer revision → (diff)
Jump to navigation Jump to search

l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Parameters

Parameter Dep
RF Power 150 W
Pressure 1000 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 250 sccm
He Flow 150 sccm
Temperature 200°C

Capabilities

Parameter
Deposition Rate 7.4 Å/sec
Index of Refraction 1.466
Stress -320 MPa


Qualification

Occasionally L_ox200 is tested on a 100 mm Si wafer. The results can be seen below.