View source for Plasmatherm 790/Processes/L nit350

l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a stress near 25 MPa and an index of 2.0.

[[Category:Processes]]
{{Infobox process
|image      = 
|caption    =
|technology = PECVD
|material   = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
|chemicals  =
|gases      = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]]
|created    = 
|modified   = 
|authors    = 
}}

==Capabilities==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
! 
|-
| Deposition Rate
|  27.9 nm/min
|-
| Index of Refraction
| 1.999
|-
| Stress
| 10 MPa
|-
|}

Qualification is done with a 5 minute run, max allowed thickness of 2µm.

==Parameters==
{| class="wikitable" border="1" style="text-align: center"
|-
! Parameter
! Dep
|-
| RF Power
| 150 W
|-
| Pressure
| 1500 mTorr
|-
| NH<sub>3</sub> Flow
| 1.43 sccm
|-
| N<sub>2</sub> Flow
| 160 sccm
|-
| He Flow
| 490 sccm
|-
| SiH<sub>4</sub> Flow
| 5 sccm
|-
| Temperature
| 350°C
|-
|}