Difference between revisions of "Plasmatherm 790/Processes/L nit350"

Latest revision as of 09:38, 28 October 2021

l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.

Qualification is done with a 5 minute run, max allowed thickness of 2µm.

@@ Line 8: / Line 8: @@
 |material   = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
 |chemicals  =
-|gases      = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]]
+|gases      = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]]
 |created    =
 |modified   =
 |authors    =
 }}
+==Capabilities==
+{| class="wikitable" border="1" style="text-align: center"
+|-
+! Parameter
+!
+|-
+| Deposition Rate
+|  27.9 nm/min
+|-
+| Index of Refraction
+| 1.999
+|-
+| Stress
+| 10 MPa
+|-
+|}
+Qualification is done with a 5 minute run, max allowed thickness of 2µm.
 ==Parameters==
@@ Line 42: / Line 61: @@
 |-
 |}
-==Capabilities==
-{| class="wikitable" border="1" style="text-align: center"
-|-
-! Parameter
-!
-|-
-| Deposition Rate
-|  4.3 Å/sec
-|-
-| Index of Refraction
-| 2.00 ± 0.02
-|-
-| Stress
-| 50 ± 50 MPa
-|-
-|}
-This recipe has also show to work as a KOH mask.
-==Qualification==
-<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
-Occasionally L_nit350 is tested on a 100 mm Si wafer.  The results can be seen below.
-{{expand section|need the chart}}