Difference between revisions of "Plasmatherm 790/Processes/L nit350"

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(Created page with "m_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790 Category:Processes {{Infobox process |image = |caption = |technology = PECVD |mate...")
 
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m_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]
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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a lower stress and index at 2.0.
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[[Category:Processes]]
 
[[Category:Processes]]
 
{{Infobox process
 
{{Infobox process
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|-
 
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| NH<sub>3</sub> Flow
 
| NH<sub>3</sub> Flow
| 1.8 sccm
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| 1.43 sccm
 
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|-
 
| N<sub>2</sub> Flow
 
| N<sub>2</sub> Flow
| 1500 sccm
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| 160 sccm
 
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|-
 
| SiH<sub>4</sub> Flow
 
| SiH<sub>4</sub> Flow
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|-
 
| Deposition Rate
 
| Deposition Rate
| 5.9 Å/sec
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| Å/sec
 
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| Index of Refraction
 
| Index of Refraction

Revision as of 08:59, 28 July 2015

l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a lower stress and index at 2.0.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2



Parameters

Parameter Dep
RF Power 100 W
Pressure 2000 mTorr
NH3 Flow 1.43 sccm
N2 Flow 160 sccm
SiH4 Flow 5 sccm
Temperature 350°C

Capabilities

Parameter
Deposition Rate Å/sec
Index of Refraction 2.02
Stress 519 MPa
Roughness ?

Limitations

The limitations for this recipe are still being defined.

Qualification

Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.