Difference between revisions of "Plasmatherm 790/Processes/L nit350"

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m (Wrightsh moved page Plasmatherm 790/Processes/l nit350 to Plasmatherm 790/Processes/L nit350 without leaving a redirect)
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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a lower stress and index at 2.0.
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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a stress near 25 MPa and an index of 2.0.
  
 
[[Category:Processes]]
 
[[Category:Processes]]
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|-
 
|-
 
| RF Power
 
| RF Power
| 100 W
+
| 150 W
 
|-
 
|-
 
| Pressure
 
| Pressure
| 2000 mTorr
+
| 1500 mTorr
 
|-
 
|-
 
| NH<sub>3</sub> Flow
 
| NH<sub>3</sub> Flow
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| N<sub>2</sub> Flow
 
| N<sub>2</sub> Flow
 
| 160 sccm
 
| 160 sccm
 +
|-
 +
| He Flow
 +
| 490 sccm
 
|-
 
|-
 
| SiH<sub>4</sub> Flow
 
| SiH<sub>4</sub> Flow
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|-
 
|-
 
| Index of Refraction
 
| Index of Refraction
| 2.02
+
| 2.00 ± 0.02
 
|-
 
|-
 
| Stress
 
| Stress
| 519 MPa
+
| 50 ± 50 MPa
|-
 
| Roughness
 
| ?
 
 
|-
 
|-
 
|}
 
|}
  
==Limitations==
+
This recipe has also show to work as a KOH mask.
The limitations for this recipe are still being defined.
 
  
 
==Qualification==
 
==Qualification==
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
Occasionally m_nit350 is tested on a 100 mm Si wafer.  The deposition rate can be seen below for m_nit200, 260 and 350.
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Occasionally L_nit350 is tested on a 100 mm Si wafer.  The results can be seen below.
 
 
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|width=700
 
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Revision as of 15:43, 29 July 2015

l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2



Parameters

Parameter Dep
RF Power 150 W
Pressure 1500 mTorr
NH3 Flow 1.43 sccm
N2 Flow 160 sccm
He Flow 490 sccm
SiH4 Flow 5 sccm
Temperature 350°C

Capabilities

Parameter
Deposition Rate Å/sec
Index of Refraction 2.00 ± 0.02
Stress 50 ± 50 MPa

This recipe has also show to work as a KOH mask.

Qualification

Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.