Difference between revisions of "Plasmatherm 790/Processes/L nit350"
< Plasmatherm 790 | Processes
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m (Wrightsh moved page Plasmatherm 790/Processes/l nit350 to Plasmatherm 790/Processes/L nit350 without leaving a redirect) |
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| − | l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a | + | l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a stress near 25 MPa and an index of 2.0. |
[[Category:Processes]] | [[Category:Processes]] | ||
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|- | |- | ||
| RF Power | | RF Power | ||
| − | | | + | | 150 W |
|- | |- | ||
| Pressure | | Pressure | ||
| − | | | + | | 1500 mTorr |
|- | |- | ||
| NH<sub>3</sub> Flow | | NH<sub>3</sub> Flow | ||
| Line 31: | Line 31: | ||
| N<sub>2</sub> Flow | | N<sub>2</sub> Flow | ||
| 160 sccm | | 160 sccm | ||
| + | |- | ||
| + | | He Flow | ||
| + | | 490 sccm | ||
|- | |- | ||
| SiH<sub>4</sub> Flow | | SiH<sub>4</sub> Flow | ||
| Line 50: | Line 53: | ||
|- | |- | ||
| Index of Refraction | | Index of Refraction | ||
| − | | 2.02 | + | | 2.00 ± 0.02 |
|- | |- | ||
| Stress | | Stress | ||
| − | | | + | | 50 ± 50 MPa |
| − | |||
| − | |||
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|- | |- | ||
|} | |} | ||
| − | + | This recipe has also show to work as a KOH mask. | |
| − | |||
==Qualification== | ==Qualification== | ||
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time--> | <!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time--> | ||
| − | Occasionally | + | Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below. |
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Revision as of 14:43, 29 July 2015
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2 |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | Å/sec |
| Index of Refraction | 2.00 ± 0.02 |
| Stress | 50 ± 50 MPa |
This recipe has also show to work as a KOH mask.
Qualification
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
