Difference between revisions of "Plasmatherm 790/Processes/L nit350"

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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a lower stress and index at 2.0.
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l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]].  It is optimized to have a stress near 25 MPa and an index of 2.0.
  
 
[[Category:Processes]]
 
[[Category:Processes]]
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|material  = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
 
|material  = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]]
 
|chemicals  =
 
|chemicals  =
|gases      = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]]
+
|gases      = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]]
 
|created    =  
 
|created    =  
 
|modified  =  
 
|modified  =  
 
|authors    =  
 
|authors    =  
 
}}
 
}}
 +
 +
==Capabilities==
 +
{| class="wikitable" border="1" style="text-align: center"
 +
|-
 +
! Parameter
 +
!
 +
|-
 +
| Deposition Rate
 +
|  27.9 nm/min
 +
|-
 +
| Index of Refraction
 +
| 1.999
 +
|-
 +
| Stress
 +
| 10 MPa
 +
|-
 +
|}
 +
 +
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
  
 
==Parameters==
 
==Parameters==
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|-
 
|-
 
| RF Power
 
| RF Power
| 100 W
+
| 150 W
 
|-
 
|-
 
| Pressure
 
| Pressure
| 2000 mTorr
+
| 1500 mTorr
 
|-
 
|-
 
| NH<sub>3</sub> Flow
 
| NH<sub>3</sub> Flow
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| N<sub>2</sub> Flow
 
| N<sub>2</sub> Flow
 
| 160 sccm
 
| 160 sccm
 +
|-
 +
| He Flow
 +
| 490 sccm
 
|-
 
|-
 
| SiH<sub>4</sub> Flow
 
| SiH<sub>4</sub> Flow
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|-
 
|-
 
|}
 
|}
 
==Capabilities==
 
{| class="wikitable" border="1" style="text-align: center"
 
|-
 
! Parameter
 
!
 
|-
 
| Deposition Rate
 
|  Å/sec
 
|-
 
| Index of Refraction
 
| 2.02
 
|-
 
| Stress
 
| 519 MPa
 
|-
 
| Roughness
 
| ?
 
|-
 
|}
 
 
==Limitations==
 
The limitations for this recipe are still being defined.
 
 
==Qualification==
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
Occasionally m_nit350 is tested on a 100 mm Si wafer.  The deposition rate can be seen below for m_nit200, 260 and 350.
 
 
{{#widget:Iframe
 
|url=https://docs.google.com/spreadsheets/d/1jDSV00jZ-1vppt2MgGRAJyXRvxEE3rJIlXtngODM9-0/pubchart?oid=815237925&format=interactive
 
|width=700
 
|height=400
 
|border=0
 
}}
 

Latest revision as of 09:38, 28 October 2021

l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2, He



Capabilities

Parameter
Deposition Rate 27.9 nm/min
Index of Refraction 1.999
Stress 10 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.

Parameters

Parameter Dep
RF Power 150 W
Pressure 1500 mTorr
NH3 Flow 1.43 sccm
N2 Flow 160 sccm
He Flow 490 sccm
SiH4 Flow 5 sccm
Temperature 350°C