Difference between revisions of "Plasmatherm 790/Processes/L nit350"
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| − | l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a | + | l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a stress near 25 MPa and an index of 2.0. |
[[Category:Processes]] | [[Category:Processes]] | ||
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|material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]] | |material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]] | ||
|chemicals = | |chemicals = | ||
| − | |gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]] | + | |gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]] |
|created = | |created = | ||
|modified = | |modified = | ||
|authors = | |authors = | ||
}} | }} | ||
| + | |||
| + | ==Capabilities== | ||
| + | {| class="wikitable" border="1" style="text-align: center" | ||
| + | |- | ||
| + | ! Parameter | ||
| + | ! | ||
| + | |- | ||
| + | | Deposition Rate | ||
| + | | 27.9 nm/min | ||
| + | |- | ||
| + | | Index of Refraction | ||
| + | | 1.999 | ||
| + | |- | ||
| + | | Stress | ||
| + | | 10 MPa | ||
| + | |- | ||
| + | |} | ||
| + | |||
| + | Qualification is done with a 5 minute run, max allowed thickness of 2µm. | ||
==Parameters== | ==Parameters== | ||
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|- | |- | ||
| RF Power | | RF Power | ||
| − | | | + | | 150 W |
|- | |- | ||
| Pressure | | Pressure | ||
| − | | | + | | 1500 mTorr |
|- | |- | ||
| NH<sub>3</sub> Flow | | NH<sub>3</sub> Flow | ||
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| N<sub>2</sub> Flow | | N<sub>2</sub> Flow | ||
| 160 sccm | | 160 sccm | ||
| + | |- | ||
| + | | He Flow | ||
| + | | 490 sccm | ||
|- | |- | ||
| SiH<sub>4</sub> Flow | | SiH<sub>4</sub> Flow | ||
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Latest revision as of 09:38, 28 October 2021
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 27.9 nm/min |
| Index of Refraction | 1.999 |
| Stress | 10 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
