Difference between revisions of "Plasmatherm 790/Processes/L nit350"
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(Created page with "m_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790 Category:Processes {{Infobox process |image = |caption = |technology = PECVD |mate...") |
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| − | + | l_nit350 is a higher temp nitride deposition recipe for the [[Plasmatherm 790]]. It is optimized to have a lower stress and index at 2.0. | |
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{{Infobox process | {{Infobox process | ||
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| NH<sub>3</sub> Flow | | NH<sub>3</sub> Flow | ||
| − | | 1. | + | | 1.43 sccm |
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| N<sub>2</sub> Flow | | N<sub>2</sub> Flow | ||
| − | | | + | | 160 sccm |
|- | |- | ||
| SiH<sub>4</sub> Flow | | SiH<sub>4</sub> Flow | ||
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| Deposition Rate | | Deposition Rate | ||
| − | | | + | | Å/sec |
|- | |- | ||
| Index of Refraction | | Index of Refraction | ||
Revision as of 07:59, 28 July 2015
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a lower stress and index at 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2 |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 100 W |
| Pressure | 2000 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | Å/sec |
| Index of Refraction | 2.02 |
| Stress | 519 MPa |
| Roughness | ? |
Limitations
The limitations for this recipe are still being defined.
Qualification
Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.
