Difference between revisions of "Plasmatherm 790/Processes/L nit350"
m (Wrightsh moved page Plasmatherm 790/Processes/l nit350 to Plasmatherm 790/Processes/L nit350 without leaving a redirect)
Revision as of 14:37, 29 July 2015
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a lower stress and index at 2.0.
|About this Process|
|Gases Used||SiH4, NH3, N2|
|RF Power||100 W|
|NH3 Flow||1.43 sccm|
|N2 Flow||160 sccm|
|SiH4 Flow||5 sccm|
|Index of Refraction||2.02|
The limitations for this recipe are still being defined.
Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.