Difference between revisions of "Plasmatherm 790/Processes/L nit350"
< Plasmatherm 790 | Processes
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| Line 21: | Line 21: | ||
|- | |- | ||
| Deposition Rate | | Deposition Rate | ||
| − | | | + | | 27.9 nm/min |
|- | |- | ||
| Index of Refraction | | Index of Refraction | ||
| − | | | + | | 1.999 |
|- | |- | ||
| Stress | | Stress | ||
| − | | | + | | 10 MPa |
|- | |- | ||
|} | |} | ||
Revision as of 09:38, 28 October 2021
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 27.9 nm/min |
| Index of Refraction | 1.999 |
| Stress | 10 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm. This recipe has also show to work as a KOH mask.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
