Difference between revisions of "Plasmatherm 790/Processes/L nit350"
< Plasmatherm 790 | Processes
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|material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]] | |material = [[Silicon nitride|Si<sub>3</sub>N<sub>4</sub>]] | ||
|chemicals = | |chemicals = | ||
| − | |gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]] | + | |gases = [[SiH4|SiH<sub>4</sub>]], [[NH3|NH<sub>3</sub>]], [[Nitrogen|N<sub>2</sub>]], [[Helium|He]] |
|created = | |created = | ||
|modified = | |modified = | ||
Revision as of 15:04, 30 July 2015
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2, He |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1500 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| He Flow | 490 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 4.3 Å/sec |
| Index of Refraction | 2.00 ± 0.02 |
| Stress | 50 ± 50 MPa |
This recipe has also show to work as a KOH mask.
Qualification
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
![[icon]](/wiki/File:Wiki_letter_w.svg){kind=small} | This section requires expansion with: need the chart. |
