Plasmatherm 790/Processes/L nit350
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a stress near 25 MPa and an index of 2.0.
|About this Process|
|Gases Used||SiH4, NH3, N2, He|
|RF Power||150 W|
|NH3 Flow||1.43 sccm|
|N2 Flow||160 sccm|
|He Flow||490 sccm|
|SiH4 Flow||5 sccm|
|Deposition Rate||4.3 Å/sec|
|Index of Refraction||2.00 ± 0.02|
|Stress||50 ± 50 MPa|
Qualification is done with a 5 minute run, max allowed thickness of 2µm. This recipe has also show to work as a KOH mask.
Occasionally L_nit350 is tested on a 100 mm Si wafer. The results can be seen below.
This section requires expansion with: need the chart.