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Plasmatherm 790/Processes/L nit350

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m_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Si3N4
Gases Used SiH4, NH3, N2



Contents

Parameters

Parameter Dep
RF Power 100 W
Pressure 2000 mTorr
NH3 Flow 1.8 sccm
N2 Flow 1500 sccm
SiH4 Flow 5 sccm
Temperature 350°C

Capabilities

Parameter
Deposition Rate 5.9 Å/sec
Index of Refraction 2.02
Stress 519 MPa
Roughness ?

Limitations

The limitations for this recipe are still being defined.

Qualification

Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.