Plasmatherm 790/Processes/L nit350
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Revision as of 14:37, 29 July 2015 by Wrightsh (talk | contribs) (Wrightsh moved page Plasmatherm 790/Processes/l nit350 to Plasmatherm 790/Processes/L nit350 without leaving a redirect)
l_nit350 is a higher temp nitride deposition recipe for the Plasmatherm 790. It is optimized to have a lower stress and index at 2.0.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | Si3N4 |
| Gases Used | SiH4, NH3, N2 |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 100 W |
| Pressure | 2000 mTorr |
| NH3 Flow | 1.43 sccm |
| N2 Flow | 160 sccm |
| SiH4 Flow | 5 sccm |
| Temperature | 350°C |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | Å/sec |
| Index of Refraction | 2.02 |
| Stress | 519 MPa |
| Roughness | ? |
Limitations
The limitations for this recipe are still being defined.
Qualification
Occasionally m_nit350 is tested on a 100 mm Si wafer. The deposition rate can be seen below for m_nit200, 260 and 350.
