Difference between revisions of "Plasmatherm 790/Processes/L ox200"

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==Capabilities==
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{| class="wikitable" border="1" style="text-align: center"
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|-
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! Parameter
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!
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|-
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| Deposition Rate
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|  7.5 Å/sec
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|-
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| Index of Refraction
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| 1.466
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|-
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| Stress
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| -325 MPa
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==Parameters==
 
==Parameters==
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==Capabilities==
 
{| class="wikitable" border="1" style="text-align: center"
 
|-
 
! Parameter
 
!
 
|-
 
| Deposition Rate
 
|  7.5 Å/sec
 
|-
 
| Index of Refraction
 
| 1.466
 
|-
 
| Stress
 
| -325 MPa
 
|-
 
|}
 
  
 
This process is qualified with a 5 min run.  The max allowed thickness is 2µm.
 
This process is qualified with a 5 min run.  The max allowed thickness is 2µm.

Revision as of 11:52, 25 February 2020

l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Capabilities

Parameter
Deposition Rate 7.5 Å/sec
Index of Refraction 1.466
Stress -325 MPa

Parameters

Parameter Dep
RF Power 150 W
Pressure 1000 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 250 sccm
He Flow 150 sccm
Temperature 200°C


This process is qualified with a 5 min run. The max allowed thickness is 2µm.