Difference between revisions of "Plasmatherm 790/Processes/L ox200"

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Qualification is done with a 5 minute run, max allowed thickness of 2µm.
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This process is qualified with a 5 min run.  The max allowed thickness is 2µm.
 
 
==Qualification==
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
Occasionally L_ox200 is tested on a 100 mm Si wafer.  The results can be seen below.
 
 
 
{{expand section|need the chart}}
 

Revision as of 12:51, 25 February 2020

l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Parameters

Parameter Dep
RF Power 150 W
Pressure 1000 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 250 sccm
He Flow 150 sccm
Temperature 200°C

Capabilities

Parameter
Deposition Rate 7.5 Å/sec
Index of Refraction 1.466
Stress -325 MPa

This process is qualified with a 5 min run. The max allowed thickness is 2µm.