Difference between revisions of "Plasmatherm 790/Processes/L ox200"
< Plasmatherm 790 | Processes
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| Line 21: | Line 21: | ||
|- | |- | ||
| Deposition Rate | | Deposition Rate | ||
| − | | | + | | 48 nm/min |
|- | |- | ||
| Index of Refraction | | Index of Refraction | ||
| − | | 1. | + | | 1.469 |
|- | |- | ||
| Stress | | Stress | ||
| − | | - | + | | -350 MPa |
|- | |- | ||
|} | |} | ||
This process is qualified with a 5 min run. The max allowed thickness is 2µm. | This process is qualified with a 5 min run. The max allowed thickness is 2µm. | ||
| − | |||
==Parameters== | ==Parameters== | ||
Latest revision as of 10:35, 28 October 2021
l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | SiO2 |
| Gases Used | SiH4, N2O, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 48 nm/min |
| Index of Refraction | 1.469 |
| Stress | -350 MPa |
This process is qualified with a 5 min run. The max allowed thickness is 2µm.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 1000 mTorr |
| SiH4 Flow | 3.0 sccm |
| N2O Flow | 250 sccm |
| He Flow | 150 sccm |
| Temperature | 200°C |
