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Plasmatherm 790/Processes/L ox200

< Plasmatherm 790‎ | Processes
Revision as of 11:52, 25 February 2020 by Wrightsh (talk | contribs)

l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He


Deposition Rate 7.5 Å/sec
Index of Refraction 1.466
Stress -325 MPa


Parameter Dep
RF Power 150 W
Pressure 1000 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 250 sccm
He Flow 150 sccm
Temperature 200°C

This process is qualified with a 5 min run. The max allowed thickness is 2µm.