Plasmatherm 790/Processes/L ox200
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l_ox200 is a lower temp oxide deposition recipe for the Plasmatherm 790.
About this Process | |
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Process Details | |
Equipment | Plasmatherm 790 |
Technology | PECVD |
Material | SiO2 |
Gases Used | SiH4, N2O, He |
Capabilities
Parameter | |
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Deposition Rate | 48 nm/min |
Index of Refraction | 1.469 |
Stress | -350 MPa |
This process is qualified with a 5 min run. The max allowed thickness is 2µm.
Parameters
Parameter | Dep |
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RF Power | 150 W |
Pressure | 1000 mTorr |
SiH4 Flow | 3.0 sccm |
N2O Flow | 250 sccm |
He Flow | 150 sccm |
Temperature | 200°C |