Difference between revisions of "Plasmatherm 790/Processes/L ox350"

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==Capabilities==
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! Parameter
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| Deposition Rate
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|  7.2 Å/sec
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| Index of Refraction
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| 1.465
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| Stress
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| -380 MPa
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Qualification is done with a 5 minute run, max allowed thickness of 2µm.
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{{expand section|need the chart}}
 
==Parameters==
 
==Parameters==
 
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==Capabilities==
 
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{| class="wikitable" border="1" style="text-align: center"
 
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|-
 
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! Parameter
 
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!
 
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|-
 
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| Deposition Rate
 
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|  7.2 Å/sec
 
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|-
 
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| Index of Refraction
 
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| 1.465
 
−
|-
 
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| Stress
 
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| -380 MPa
 
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|-
 
−
|}
 
−
 
−
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
 
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==Qualification==
 
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<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
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Occasionally L_ox350 is tested on a 100 mm Si wafer.  The results can be seen below.
 
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{{expand section|need the chart}}
 

Revision as of 14:45, 10 March 2020

l_ox350 is a higher temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Capabilities

Parameter
Deposition Rate 7.2 Å/sec
Index of Refraction 1.465
Stress -380 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.


Parameters

Parameter Dep
RF Power 75 W
Pressure 900 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 200 sccm
He Flow 100 sccm
Temperature 350°C
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