Difference between revisions of "Plasmatherm 790/Processes/L ox350"

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Line 22: Line 22:
 
|-
 
|-
 
| Deposition Rate
 
| Deposition Rate
7.2 Å/sec
+
44.5 nm/min
 
|-
 
|-
 
| Index of Refraction
 
| Index of Refraction
| 1.465
+
| 1.467
 
|-
 
|-
 
| Stress
 
| Stress
| -380 MPa
+
| -420 MPa
 
|-
 
|-
 
|}
 
|}

Latest revision as of 09:36, 28 October 2021

l_ox350 is a higher temp oxide deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Capabilities

Parameter
Deposition Rate 44.5 nm/min
Index of Refraction 1.467
Stress -420 MPa

Qualification is done with a 5 minute run, max allowed thickness of 2µm.

Parameters

Parameter Dep
RF Power 75 W
Pressure 900 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 200 sccm
He Flow 100 sccm
Temperature 350°C