Plasmatherm 790/Processes/L ox350
l_ox350 is a higher temp oxide deposition recipe for the Plasmatherm 790.
About this Process | |
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Process Details | |
Equipment | Plasmatherm 790 |
Technology | PECVD |
Material | SiO2 |
Gases Used | SiH4, N2O, He |
Capabilities
Parameter | |
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Deposition Rate | 44.5 nm/min |
Index of Refraction | 1.467 |
Stress | -420 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
Parameters
Parameter | Dep |
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RF Power | 75 W |
Pressure | 900 mTorr |
SiH4 Flow | 3.0 sccm |
N2O Flow | 200 sccm |
He Flow | 100 sccm |
Temperature | 350°C |