Plasmatherm 790/Processes/L ox350
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l_ox350 is a higher temp oxide deposition recipe for the Plasmatherm 790.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | SiO2 |
| Gases Used | SiH4, N2O, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 7.2 Å/sec |
| Index of Refraction | 1.465 |
| Stress | -380 MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
![[icon]](/wiki/File:Wiki_letter_w.svg){kind=small} | This section requires expansion with: need the chart. |
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 75 W |
| Pressure | 900 mTorr |
| SiH4 Flow | 3.0 sccm |
| N2O Flow | 200 sccm |
| He Flow | 100 sccm |
| Temperature | 350°C |
