Difference between revisions of "Plasmatherm 790/Processes/L ox350R"

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| Deposition Rate
| Deposition Rate
? Å/sec
6.5 Å/sec
| Index of Refraction
| Index of Refraction

Revision as of 12:59, 23 March 2016

L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He


Parameter Dep
RF Power 150 W
Pressure 900 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 200 sccm
He Flow 100 sccm
Temperature 350°C


Deposition Rate 6.5 Å/sec
Index of Refraction ?
Stress ? MPa