Difference between revisions of "Plasmatherm 790/Processes/L ox350R"
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L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen. | L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen. | ||
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[[Category:Processes]] | [[Category:Processes]] | ||
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| + | ==Capabilities== | ||
| + | {| class="wikitable" border="1" style="text-align: center" | ||
| + | |- | ||
| + | ! Parameter | ||
| + | ! | ||
| + | |- | ||
| + | | Deposition Rate | ||
| + | | 6.5 Å/sec | ||
| + | |- | ||
| + | | Index of Refraction | ||
| + | | ? | ||
| + | |- | ||
| + | | Stress | ||
| + | | ? MPa | ||
| + | |- | ||
| + | |} | ||
| + | |||
| + | Qualification is done with a 5 minute run, max allowed thickness of 2µm. | ||
==Parameters== | ==Parameters== | ||
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Latest revision as of 14:46, 10 March 2020
L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | PECVD |
| Material | SiO2 |
| Gases Used | SiH4, N2O, He |
Capabilities
| Parameter | |
|---|---|
| Deposition Rate | 6.5 Å/sec |
| Index of Refraction | ? |
| Stress | ? MPa |
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
Parameters
| Parameter | Dep |
|---|---|
| RF Power | 150 W |
| Pressure | 900 mTorr |
| SiH4 Flow | 3.0 sccm |
| N2O Flow | 200 sccm |
| He Flow | 100 sccm |
| Temperature | 350°C |
