Difference between revisions of "Plasmatherm 790/Processes/L ox350R"

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(Created page with "l_ox350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0...")
 
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l_ox350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power.  Currently more characterization is needed but roughness as low as 0.23 nm have been seen.
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L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power.  Currently more characterization is needed but roughness as low as 0.23 nm have been seen.
 
{{expand section|This recipe needs further characterization.}}
 
{{expand section|This recipe needs further characterization.}}
  

Revision as of 10:05, 23 December 2015

L_OX350R is a 350 C oxide deposition recipe designed to reduce the film roughness by increasing the power. Currently more characterization is needed but roughness as low as 0.23 nm have been seen.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material SiO2
Gases Used SiH4, N2O, He



Parameters

Parameter Dep
RF Power 150 W
Pressure 900 mTorr
SiH4 Flow 3.0 sccm
N2O Flow 200 sccm
He Flow 100 sccm
Temperature 350°C

Capabilities

Parameter
Deposition Rate ? Å/sec
Index of Refraction ?
Stress ? MPa