Difference between revisions of "Plasmatherm 790/Processes/L oxy350"

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Line 36: Line 36:
 
|-
 
|-
 
| NH<sub>3</sub> Flow
 
| NH<sub>3</sub> Flow
| 1.43 sccm
+
| 1.5 sccm
 
|-
 
|-
 
| He Flow
 
| He Flow
Line 53: Line 53:
 
|-
 
|-
 
| Deposition Rate
 
| Deposition Rate
|  6.3 Å/sec
+
|  6.9 Å/sec
 
|-
 
|-
 
| Index of Refraction
 
| Index of Refraction
| 1.65
+
| 1.63
 
|-
 
|-
 
| Stress
 
| Stress
| -30 MPa
+
| 60 MPa
 
|-
 
|-
 
|}
 
|}
 
Qualification is done with a 5 minute run, max allowed thickness of 2µm.
 
 
==Qualification==
 
 
{{expand section|need the chart}}
 

Revision as of 10:33, 7 August 2019

l_on350 is a higher temp oxynitride deposition recipe for the Plasmatherm 790.

About this Process
Process Details
Equipment Plasmatherm 790
Technology PECVD
Material Oxynitride
Gases Used SiH4, N2O, He, NH3,



Parameters

Parameter Dep
RF Power 150 W
Pressure 1500 mTorr
SiH4 Flow 5.0 sccm
N2 Flow 160 sccm
N20 Flow 10 sccm
NH3 Flow 1.5 sccm
He Flow 490 sccm
Temperature 350°C

Capabilities

Parameter
Deposition Rate 6.9 Å/sec
Index of Refraction 1.63
Stress 60 MPa