Plasmatherm 790/Processes/m-si-n-1
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This is a basic niride etch with a relatively slow etch rate.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | RIE |
| Material | Si3N4 |
| Mask Materials | Photoresist |
| Gases Used | CF4, O2 |
Contents
Parameters
| Parameter | Etch |
|---|---|
| RF Power | 80 W |
| Pressure | 100 mTorr |
| CF4 Flow | 40 sccm |
| O2 Flow | 2 sccm |
Capabilities
Etch Rate
- Si3N4 : 340 Å/min
- Plasmatherm Si3N4 : 500 Å/min
Mask Selectivity
- Photoresist Etch Rate
- SPR 220: 250 Å/min
- Oxide: 170 Å/min
Sidewall Profile
- Undercut: ?
Limitations
The limitations for this recipe are still being defined.
Qualification
Once a month m-si-n-1 is run for for 5 minutes on a 100 mm (4") nitride wafer. This etch rate is reported in the chart below.
