Plasmatherm 790/Processes/m-si-n-1

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This is a basic niride etch with a relatively slow etch rate.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material Si3N4
Mask Materials Photoresist
Gases Used CF4, O2



Parameters

Parameter Etch
RF Power 80 W
Pressure 100 mTorr
CF4 Flow 40 sccm
O2 Flow 2 sccm

Capabilities

Etch Rate

Mask Selectivity

  • Photoresist Etch Rate
    • SPR 220: 250 Å/min
    • Oxide: 170 Å/min

Sidewall Profile

  • Undercut: ?

Limitations

The limitations for this recipe are still being defined.

Qualification

Once a month m-si-n-1 is run for for 5 minutes on a 100 mm (4") nitride wafer. This etch rate is reported in the chart below.

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