Difference between revisions of "Plasmatherm 790/Processes/m pary1"

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==Capabilities==
 
==Capabilities==
 
===Etch Rate===
 
===Etch Rate===
*[[Parylene]] Etch Rate: XXX
+
*[[Parylene]] Etch Rate: 2000 Å/min
 +
* [[SPR 220]]: 2000 Å/min
 +
* [[PDMS]]: XXX Å/min
  
 
===Mask Selectivity===
 
===Mask Selectivity===
* [[Silicon Dioxide|SiO2]] Etch Rate: <5  Å/min
+
* [[Silicon|Si]] Etch Rate: <5   
* Photoresist Etch Rate
+
* [[Silicon Dioxide|SiO2]] Etch Rate: <5 
** [[SPR 220]]: XXX
 
  
 
===Sidewall Profile===
 
===Sidewall Profile===
 
* Undercut: XXX
 
* Undercut: XXX
 
  
 
==Limitations==
 
==Limitations==

Revision as of 13:40, 24 February 2015

Warning Warning: This page has not been released yet.
About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material Parylene
Mask Materials Photoresist
Gases Used O2


m_pary1 is an O2 etch that can be used for parylene and other polymers.

Parameters

Parameter Etch
RF Power 105 W
Pressure 100 mTorr
O2 Flow 99 sccm

Capabilities

Etch Rate

Mask Selectivity

  • Si Etch Rate: <5
  • SiO2 Etch Rate: <5

Sidewall Profile

  • Undercut: XXX

Limitations

????

Qualification

Once a month m_pary1 is run on a XXX. This etch rate is reported in the chart below.

Then occasionally the recipe is tested on other materials as shown below.