Difference between revisions of "Plasmatherm 790/Processes/m pary1"
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| Line 40: | Line 40: | ||
===Mask Selectivity=== | ===Mask Selectivity=== | ||
| − | * [[Silicon|Si]] Etch Rate: <5 | + | * [[Silicon|Si]] Etch Rate: <5 Å/min |
| − | * [[Silicon Dioxide|SiO2]] Etch Rate: <5 | + | * [[Silicon Dioxide|SiO2]] Etch Rate: <5 Å/min |
===Sidewall Profile=== | ===Sidewall Profile=== | ||
Revision as of 13:41, 24 February 2015
 Warning: | This page has not been released yet. |
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | RIE |
| Material | Parylene |
| Mask Materials | Photoresist |
| Gases Used | O2 |
m_pary1 is an O2 etch that can be used for parylene and other polymers.
Contents
Parameters
| Parameter | Etch |
|---|---|
| RF Power | 105 W |
| Pressure | 100 mTorr |
| O2 Flow | 99 sccm |
Capabilities
Etch Rate
Mask Selectivity
Sidewall Profile
- Undercut: XXX
Limitations
????
Qualification
Once a month m_pary1 is run on a XXX. This etch rate is reported in the chart below.
Then occasionally the recipe is tested on other materials as shown below.
