Difference between revisions of "Plasmatherm 790/Processes/m pary1"

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*[[Parylene]] Etch Rate: 2000 Å/min
 
*[[Parylene]] Etch Rate: 2000 Å/min
 
* [[SPR 220]]: 2000 Å/min
 
* [[SPR 220]]: 2000 Å/min
* [[PDMS]]: ? Å/min
 
  
 
===Mask Selectivity===
 
===Mask Selectivity===
 
* [[Silicon|Si]] Etch Rate: <5 Å/min
 
* [[Silicon|Si]] Etch Rate: <5 Å/min
 
* [[Silicon Dioxide|SiO2]] Etch Rate: <5 Å/min
 
* [[Silicon Dioxide|SiO2]] Etch Rate: <5 Å/min
 
===Sidewall Profile===
 
* Undercut: ?
 
  
 
==Limitations==
 
==Limitations==
 
The limitations for this recipe are still being defined.
 
The limitations for this recipe are still being defined.
 
==Qualification==
 
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time-->
 
Once a month m_pary1 is run on a 4" wafer coated with SPR 220 to verify it's etch rate.
 

Latest revision as of 11:03, 18 August 2021

m_pary1 is an O2 etch that can be used for parylene and other polymers.

About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material Parylene
Mask Materials Photoresist
Gases Used O2



Parameters

Parameter Etch
RF Power 105 W
Pressure 100 mTorr
O2 Flow 99 sccm

Capabilities

Etch Rate

Mask Selectivity

  • Si Etch Rate: <5 Å/min
  • SiO2 Etch Rate: <5 Å/min

Limitations

The limitations for this recipe are still being defined.