Difference between revisions of "Plasmatherm 790/Processes/m pary1"
< Plasmatherm 790 | Processes
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| − | < | + | m_pary1 is an O<sub>2</sub> etch that can be used for parylene and other polymers. |
[[Category:Processes]] | [[Category:Processes]] | ||
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{{Infobox process | {{Infobox process | ||
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==Parameters== | ==Parameters== | ||
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*[[Parylene]] Etch Rate: 2000 Å/min | *[[Parylene]] Etch Rate: 2000 Å/min | ||
* [[SPR 220]]: 2000 Å/min | * [[SPR 220]]: 2000 Å/min | ||
| − | * [[PDMS]]: | + | * [[PDMS]]: ? Å/min |
===Mask Selectivity=== | ===Mask Selectivity=== | ||
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===Sidewall Profile=== | ===Sidewall Profile=== | ||
| − | * Undercut: | + | * Undercut: ? |
==Limitations== | ==Limitations== | ||
| − | + | The limitations for this recipe are still being defined. | |
==Qualification== | ==Qualification== | ||
<!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time--> | <!-- Insert a description of how the process is qualified, generally this should include a chart to show the processes stability over time--> | ||
| − | Once a month m_pary1 is run on a | + | Once a month m_pary1 is run on a 4" wafer coated with SPR 220 to verify it's etch rate. |
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Revision as of 11:10, 8 June 2015
m_pary1 is an O2 etch that can be used for parylene and other polymers.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | RIE |
| Material | Parylene |
| Mask Materials | Photoresist |
| Gases Used | O2 |
Contents
Parameters
| Parameter | Etch |
|---|---|
| RF Power | 105 W |
| Pressure | 100 mTorr |
| O2 Flow | 99 sccm |
Capabilities
Etch Rate
Mask Selectivity
Sidewall Profile
- Undercut: ?
Limitations
The limitations for this recipe are still being defined.
Qualification
Once a month m_pary1 is run on a 4" wafer coated with SPR 220 to verify it's etch rate.
