Difference between revisions of "Plasmatherm 790/Processes/m pary1"
< Plasmatherm 790 | Processes
Jump to navigation
Jump to search
| Line 35: | Line 35: | ||
*[[Parylene]] Etch Rate: 2000 Å/min | *[[Parylene]] Etch Rate: 2000 Å/min | ||
* [[SPR 220]]: 2000 Å/min | * [[SPR 220]]: 2000 Å/min | ||
| − | |||
===Mask Selectivity=== | ===Mask Selectivity=== | ||
* [[Silicon|Si]] Etch Rate: <5 Å/min | * [[Silicon|Si]] Etch Rate: <5 Å/min | ||
* [[Silicon Dioxide|SiO2]] Etch Rate: <5 Å/min | * [[Silicon Dioxide|SiO2]] Etch Rate: <5 Å/min | ||
| − | |||
| − | |||
| − | |||
==Limitations== | ==Limitations== | ||
The limitations for this recipe are still being defined. | The limitations for this recipe are still being defined. | ||
Latest revision as of 10:03, 18 August 2021
m_pary1 is an O2 etch that can be used for parylene and other polymers.
| About this Process | |
|---|---|
| Process Details | |
| Equipment | Plasmatherm 790 |
| Technology | RIE |
| Material | Parylene |
| Mask Materials | Photoresist |
| Gases Used | O2 |
Parameters
| Parameter | Etch |
|---|---|
| RF Power | 105 W |
| Pressure | 100 mTorr |
| O2 Flow | 99 sccm |
Capabilities
Etch Rate
Mask Selectivity
Limitations
The limitations for this recipe are still being defined.
