Plasmatherm 790/Processes/m pary1

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About this Process
Process Details
Equipment Plasmatherm 790
Technology RIE
Material Parylene
Mask Materials Photoresist
Gases Used O2


m_pary1 is an O2 etch that can be used for parylene and other polymers.

Parameters

Parameter Etch
RF Power 105 W
Pressure 100 mTorr
O2 Flow 99 sccm

Capabilities

Etch Rate

Mask Selectivity

Sidewall Profile

  • Undercut: XXX


Limitations

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Qualification

Once a month m_pary1 is run on a XXX. This etch rate is reported in the chart below.

Then occasionally the recipe is tested on other materials as shown below.